Scientists at the Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) in India have discovered the rare phenomenon of electron localisation in semiconductors. This discovery could lead to new materials with improved properties that will find applications in various fields, such as lasers, optical modulators, and photoconductors. This is reported by
IANS, a partner of TV BRICS.

The researchers studied single-crystal scandium nitride and found that it is capable of a metal-dielectric transition caused by localised electrons. This phenomenon, known as the Quasi-Classical Anderson transition, occurs due to fluctuations in the electric potential created by random impurities.

As a result of the localisation of electrons, the material becomes more resistant to electric current but also has unique properties that can be used to create new semiconductor devices.

The discovery, published in Physical Review B, could change our understanding of electron localisation in materials and open up new possibilities for creating more efficient and versatile semiconductors.

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